DTMOSVI 600V super junction power MOSFETs| Electronics Weekly

Featuring a super junction structure, the seven new products are available in TO-247, TOLL, and DFN8×8 packages.

TK058V60Z5

The company highlights the TK058V60Z5, featuring an ultra-low drain-source on-resistance (RDS(ON)) of 0.050Ω (typ.) in a DFN8×8 package.

Applications include switched-mode power supplies (SMPS) for datacentre servers, uninterruptible power supplies (UPS), and photovoltaic power conditioners.

DTMOSVI 600V

Toshiba writes:

“In the DTMOSVI 600V series, including the new products, Toshiba’s optimised gate design and process reduce the figure of merit drain-to-source on-resistance (R_DS(ON)) times total gate charge (Q_g) by approximately 36%, and R_DS(ON) times the gate-to-drain charge (Q_gd) by approximately 52% compared to Toshiba’s previous generation, the DTMOSIV-H series with the same voltage rating.”

“As a result, conduction, drive, and switching losses are reduced, contributing to higher efficiency in power supply circuits.”

Tools

In terms of supporting tools, Toshiba highlights the G0 SPICE model to verify circuit functionality. And G2 SPICE models that reproduce transient characteristics.

Also, its Online Circuit Simulator enables you to verify circuit operation without the building a simulation environment and downloading element models.

See also: Toshiba launches photorelays for test and measurement equipment