ScaleBridge Labs incubator offers leading GaN technology

At Microelectronics US, it announced 60nm N-polar RF GaN, claiming to tbe the world’s first N-polar GaN early foundry offering, through HRL Laboratories. The foundry is ISO 9001-certified and is approved by the Department of Defense and TAPO (Trusted Access Program Office) and offers MPW (multi-project wafer) and dedicated fabrication services.

The N-polar GaN technology features two-level metal interconnects with 5µm plated airbridges, 50Ω thin film resistors, 300pF/mm² MIM (metal insulator metal) capacitors and 2-mil SiC with through-substrate vias and backside metal. Early prototyping is scheduled for July 2026, through California Dreams, a ‘superhub’ led by the University of Southern California Information Sciences Institute sponsored by the Department of War’s Microelectronics Commons programme.

ScaleBridge Labs also offers HRL’s pre-release T3L mm-wave GaN node. with the same characteristics and offering 1,000 hours high temperature reverse bias and MTTF (mean time to failure) of less than 1E6 hours at 150°C junction temperature.

Process design kits are available in both Cadence AWR Design Environment  and Keysight PathWave ADS for small or large signal and noise check models as well as native design rule and continuity checks for RFIC and MMIC design.

ScaleBridge Labs was founded by MMEC (Midwest Microelectronics Consortium) to accelerate ‘defence-first, dual-use technologies that serve both national security and commercial markets’.

It offers a hybrid incubator/accelerator modelwith access to hybrid-cloud modelling, simulation, and analysis tools, digital and physical resources to meet compliance and national security requirements and business advice including a structured approach to maturing technologies for  deployment and customer pathways with exposure to dual-use markets, DoD partners, and funding opportunities.

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