N-channel and P-channel MOSFETs in a single package.

The product is suitable  for applications including single-phase brushless DC (BLDC) motor control, brushed DC motor control, and load switches for power supply lines in consumer and industrial control equipment.

The SSM6L826R uses Toshiba’s UMOSVIIH process for the N-channel MOSFET and the UMOSVI process for the P-channel MOSFET. It is housed in a compact TSOP6F package (2.9mm × 2.8 mm × 0.8mm) with flat leads to improve mounting performance.

The device achieves low drain-source on-resistance (RDS(ON)) values of 46mΩ (max.) (VGS = 10V) for the N-channel MOSFET and 45mΩ (max.) (VGS = -10V) for the P-channel MOSFET.

As the RDS(ON) values are nearly identical, conduction losses remain well-balanced, helping designers simplify circuit development. In addition, integrating both MOSFET types into a single package reduces PCB area, component count, and bill of materials (BOM) cost.

With the release of the SSM6L826R, Toshiba expands its TSOP6F dual MOSFET lineup to include three dual N-channel MOSFETs, one dual P-channel MOSFET, and two complementary (N+P) MOSFETs, giving engineers greater flexibility in selecting the optimal device for their designs.

For more information about the SSM6L826R, visit: https://toshiba.semicon-storage.com/eu/semiconductor/product/mosfets/detail.SSM6L826R.html