Electronics

ULTRARAM being fabbed with ALE

ULTRARAM being fabbed with ALE

KAUST is using Oxford Instruments’ ALE technology to deliver sub-nanometre control with ultra-low damage processing, a requirement for the ability uquantum well heterostructures that underpin ULTRARAM.

ULTRARAM is designed to combine DRAM-class speed with non-volatile data retention, offering the potential for significant improvements in energy efficiency and system performance.

Achieving this requires exceptional control of interfaces and layer thickness within complex III–V semiconductor structures, making atomic-scale fabrication techniques ideal.

“Atomic-scale control of our quantum well structures is fundamental to ULTRARAM,” said James Ashforth-Pook, CEO and Co-Founder of Quinas Technology. “Working with KAUST Core Labs and leveraging Oxford Instruments’ Atomic Layer Etching technology gives us access to one of the world’s most advanced and credible environments for low-damage semiconductor R&D.”

KAUST are specialists in nanofabrication, plasma processing, and compound semiconductor research, supporting both academic and industrial technology development.

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