Hafnium oxide-based ferroelectric memory cells operate at

This platform is specifically designed for manufacturing ultra-low-power ICs.  The  memory cells operate at  operating voltages of less than one volt, switch within nanoseconds and exhibit a long cycle life.

The technology is especially relevant for applications that depend on energy efficiency, such as autonomous sensors, battery-powered systems or on-device artificial intelligence. “Our non-volatile memory technology has far lower power consumption than that of existing solutions.

“Affordable ultra low power technology combined with an ideally matched memory solution is especially attractive for applications like edge AI. This represents the combination of two technologies that complement each other perfectly,” says Sven Beyer from GlobalFoundries.

The researchers have been awarded the Stifterverband Science Prize Forschung im Verbund for their achievement.